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STB11NM60FDT4 Field Effect Transistor Transistors FETs MOSFETs Single

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Part Number : STB11NM60FDT4

Manufacturer : STMicroelectronics

Description : MOSFET N-CH 600V 11A D2PAK

Category : Transistors - FETs, MOSFETs - Single

Family : Transistors - FETs, MOSFETs - Single

Series : FDmesh™

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Rds On (Max) @ Id, Vgs	450 mOhm @ 5.5A, 10V
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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STB11NM60FDT4 Field Effect Transistor Transistors FETs MOSFETs Single

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